6CHモーターコントローラやTJ3やe-Gadgetで使われているFETの性能

6CHモーターコントローラやTJ3やe-Gadgetで使われているFETの性能です。
12Aは流せますね。でも放熱は２Ｗ以下だと思うので最大4.5V/0.1Ωは無理。
4.47A*4.47A*0.1Ωまでか。貫通すると燃えますね。やっぱりカタログどおり２Ａですね。
使用する電池によってはポリスイッチを付けるべきですか。

N-Channel Enhancement Mode Field Effect Transistor with Gate Voltages as Low as 2.5V
Model Number: SP3055LD(-GP)
Key Specifications/Special Features:
VDS: 25V
ID: 12A
RDS (on) type<90mΩ (VGS: 10V) RDS (on) type<100m (VGS: 4.5V) General description: The SP3055LD uses advanced trench technology to provide excellent RDS (on), low gate charge and operation with gate voltages as low as 2.5V This device is suitable for use as a load switch or in PWM applications The free Pb lead GP type http://sinyork.manufacturer.globalsources.com/si/6008801603245/pdtl/FET-MOSFET/1039422177/Transistor.htm


P-Channel Enhancement Mode Field Effect Transistor, Suitable for Load Switch/PWM Applications
Model Number: SP06P03LD(-GP)
Key Specifications/Special Features:
VDS: 30V
ID: 12A
RDS (on) type<45mΩ (VGS: 10V) RDS (on) type<75mΩ (VGS: 4.5V) General description: suitable for use as a load switch or in PWM applications The SP06P03LD uses advanced trench technology to provide excellent RDS (on), low gate charge and operation with gate voltages as low as 2.5V This device is The free Pb lead GP type http://sinyork.manufacturer.globalsources.com/si/6008801603245/pdtl/FET-MOSFET/1039422227/Effect-Transistor.htm